oct-24-2002 1 bby52... silicon tuning diodes high q hyperabrupt tuning diode designed for low tuning voltage operation for vco's in mobile communications equipment BBY52-02L bby52-02w type package configuration l s (nh) marking BBY52-02L* bby52-02w tslp-2-1 scd80 single, leadless single 0.4 0.6 k kk * preliminary maximum ratings at t a = 25c, unless otherwise specified parameter symbol value unit diode reverse voltage v r 7 v forward current i f 20 ma operating temperature range t op -55 ... 150 c storage temperature t stg -55 ... 150
oct-24-2002 2 bby52... electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics reverse current v r = 6 v v r = 6 v, t a = 85 c i r - - - - 10 200 na ac characteristics diode capacitance v r = 1 v, f = 1 mhz v r = 2 v, f = 1 mhz v r = 3 v, f = 1 mhz v r = 4 v, f = 1 mhz c t 1.4 0.95 0.9 0.85 1.85 1.5 1.35 1.15 2.2 2 1.75 1.45 pf capacitance ratio v r = 1 v, v r = 4 v, f = 1 mhz c t1 / c t4 1.1 1.6 2.1 series resistance v r = 1 v, f = 1 ghz r s - 0.9 1.7
oct-24-2002 3 bby52... diode capacitance c t = (v r ) f = 1mhz 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 v 4 v r 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 pf 2.6 c t reverse current i r = ( v r ) t a = 25c 0 1 2 3 4 5 v 7 v r 0 5 10 15 20 25 30 35 pa 45 i r
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